Simulation of GaAs submicron FET with hot-electron injection structure
نویسندگان
چکیده
منابع مشابه
Hot-electron spectroscopy of GaAs.
We report results both experimental and theoretical on the dynamics of hot electron transport in GaAs. Total elastic and inelastic scattering rates are calculated and compared with the results of a new experimental technique "Hot Electron Spectroscopy". The magnetic field dependence of hot electron spectra has been studied. It is shown that application of a magnetic field normal to the injectio...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 1983
ISSN: 0013-5194
DOI: 10.1049/el:19830475